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Offering a wide range of materials created ISSI IC by us are reckoned for their quality based features. Since we use only authentic materials in creating our assortment of buckles, thus our range of buckles is class apart. We have the required facilities to customize our products as per the requirement of our clients.
  • CMOS Static RAM - IS62WV51216BLL-55TLI
    IS62WV51216BLL-55TLI : CMOS Static RAM
    SRAM
    1. 512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
    2. Description: The ISSI IS62WV51216ALL/ IS62WV51216BLL are highspeed, 8M bit static RAMs organized as 512K words by 16 bits.
    3. Features:
      • High-speed access time: 45ns, 55ns
      • CMOS low power operation
        – 36 mW (typical) operating
        – 12 µW (typical) CMOS standby
      • TTL compatible interface levels
      • Single power supply
        – 1.65V--2.2V VDD (62WV51216ALL)
        – 2.5V--3.6V VDD (62WV51216BLL)
      • Fully static operation: no clock or refresh required
      • Three state outputs
      • Data control for upper and lower bytes
      • Industrial temperature available
      • Lead-free available
    4. Delivery time: 2WEEKS from distributor
    5. Payment: T/T in advance
  • Static Random Access Memory - IS43DR16640B-25DBL
    IS43DR16640B-25DBL : Static Random Access Memory
    SRAM
    1. 1Gb (x8, x16) DDR2 SDRAM
    2. Description: The ISSI IS62WV51216ALL/ IS62WV51216BLL are highspeed, 8M bit static RAMs organized as 512K words by 16 bits.
    3. Features:
      • Clock frequency up to 400MHz
      • 8 internal banks for concurrent operation
      • 4-bit prefetch architecture
      • Programmable CAS Latency: 3, 4, 5, 6 and 7
      • Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6
      • Write Latency = Read Latency-1
      • Programmable Burst Sequence: Sequential or Interleave
      • Programmable Burst Length: 4 and 8
      • Automatic and Controlled Precharge Command
      • Power Down Mode
      • Auto Refresh and Self Refresh
      • Refresh Interval: 7.8 s (8192 cycles/64 ms)
      • ODT (On-Die Termination)
      • Weak Strength Data-Output Driver Option
    4. Delivery time: 2WEEKS from distributor
    5. Payment: T/T in advance
  • CMOS RAM - IS61WV25616BLL-10TLI
    IS61WV25616BLL-10TLI : CMOS RAM
    SRAM
    1. 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
    2. Description:  The ISSI IS61WV25616Axx/Bxx and IS64WV25616Bxx are high-speed, 4,194,304-bit static RAMs organized as 262,144 words by 16 bits.
    3. Features:
      High speed: (IS61/64WV25616ALL/BLL)
      • High-speed access time: 8, 10, 20 ns
      • Low Active Power: 85 mW (typical)
      • Low Standby Power: 7 mW (typical) CMOS standby
      • LOW POWER: (IS61/64WV25616ALS/BLS)
      • High-speed access time: 25, 35, 45 ns
      • Low Active Power: 35 mW (typical)
      • Low Standby Power: 0.6 mW (typical) CMOS standby
      • Single power supply
        — Vdd 1.65V to 2.2V (IS61WV25616Axx)
        — Vdd 2.4V to 3.6V (IS61/64WV25616Bxx)
      • Fully static operation: no clock or refresh required
      • Three state outputs
      • Data control for upper and lower bytes
    4. Delivery time: 2WEEKS from distributor
    5. Payment: T/T in advance
  • CMOS SRAM - IS62WV25616BLL-55TLI
    IS62WV25616BLL-55TLI : CMOS SRAM
    SRAM
    1. 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
    2. Description: The ISSI IS62WV25616ALL/IS62WV25616BLL are highspeed, low power, 4M bit SRAMs organized as 256K words by 16 bits.
    3. Features:
      • High-speed access time: 55ns, 70ns
      • CMOS low power operation
      • 36 mW (typical) operating 9 µW (typical) CMOS standby
      • TTL compatible interface levels
      • Single power supply
      • 1.65V--2.2V Vdd (IS62WV25616ALL)
      • 2.5V--3.6V Vdd (IS62WV25616BLL)
      • Fully static operation: no clock or refresh required
      • Three state outputs
      • Data control for upper and lower bytes
      • Industrial temperature available
      • Lead-free available
    4. Delivery time: 2WEEKS from distributor
    5. Payment: T/T in advance
  • Synchronous Dynamic RAM - IS42S32200E-6TL
    IS42S32200E-6TL : Synchronous Dynamic RAM
    SRAM
    1. 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
    2. Description: ISSI's 64Mb Synchronous DRAM IS42/45S32200E is organized as 524,288 bits x 32-bit x 4-bank for improved performance.
    3. Features:
      • Clock frequency: 200, 166, 143, 133 MHz
      • Fully synchronous; all signals referenced to a positive clock edge
      • Internal bank for hiding row access/precharge
      • Single 3.3V power supply LVTTL interface
      • Programmable burst length: (1, 2, 4, 8, full page)
      • Programmable burst sequence: Sequential/Interleave
      • Self refresh modes
      • 4096 refresh cycles every 16ms (A2 grade) or 64ms (Commercia, Industrial, A1 grade)
      • Random column address every clock cycle
      • Programmable CAS latency (2, 3 clocks)
      • Burst read/write and burst read/single write operations capability
      • Burst termination by burst stop and precharge command
    4. Delivery time: 2WEEKS from distributor
    5. Payment: T/T in advance
  • Synchronous DRAM - IS42S16320D-7TLI
    IS42S16320D-7TLI : Synchronous DRAM
    SRAM
    1. 16Mx32, 32Mx16, 64Mx8 512Mb SDRAM
    2. Description: ISSI's 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture.
    3. Features:
      • Clock frequency: 200, 166, 143 MHz
      • Fully synchronous; all signals referenced to a positive clock edge
      • Internal bank for hiding row access/precharge
      • Power supply: Vdd/Vddq = 2.3V-3.6V
      • IS42/45SxxxxxD - Vdd/Vddq = 3.3V
      • IS42/45RxxxxxD - Vdd/Vddq = 2.5
      • LVTTL interface
      • Programmable burst length – (1, 2, 4, 8, full page)
      • Programmable burst sequence: Sequential/Interleave
      • Auto Refresh (CBR) Self Refresh
      • 8K refresh cycles every 64 ms
      • Random column address every clock cycle
    4. Delivery time: 2WEEKS from distributor
    5. Payment: T/T in advance
  • Dynamic Random Access Memory - IS42S16800E-7TLI
    IS42S16800E-7TLI : Dynamic Random Access Memory
    SRAM
    1. 16M x 8, 8M x16 128Mb SYNCHRONOUS DRAM
    2. Description: ISSI's 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture.
    3. Features:
      The 128Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V Vdd and 3.3V Vddq memory systems containing 134,217,728 bits. Internally configured as a quad-bank DRAM with a synchronous interface.
      Each 33,554,432-bit bank is organized as 4,096 rows by 512 columns by 16 bits or 4,096 rows by 1,024 columns by 8 bits. The 128MbSDRAM includes anAUTOREFRESH MODE, and a power-saving, power-down mode.
      All signals are registered on the positive edge of the clock signal, CLK. All inputs and outputs are LVTTL compatible.
    4. Delivery time: 2WEEKS from distributor
    5. Payment: T/T in advance
  • 128mb SDRAM - IS42S16160D-7TLI
    IS42S16160D-7TLI : 128mb SDRAM
    SRAM
    1. 32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM
    2. Description: ISSI's 256Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture.
    3. Features:
      The 256MbSDRAM includes anAUTOREFRESH MODE, and a power-saving, power-down mode.
      All signals are registered on the positive edge of the clock signal, CLK.
      All inputs and outputs are LVTTL compatible.
      The 256Mb SDRAM has the ability to synchronously burst data at a high data rate with automatic column-address generation, the ability to interleave between internal banks to hide precharge time and the capability to randomly change column addresses on each clock cycle during burst access.
    4. Delivery time: 2WEEKS from distributor
    5. Payment: T/T in advance
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ISSI IC

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