Nanya Memory



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Nanya Memory are manufactured using high quality raw material in compliance with set industrial guidelines. We offer these long lasting products at very reasonable prices. When in compression, resistant to rust and corrosion, are shock proof and require low maintenance. We manufacture these products he industry guidelines and provide these to our clients at very reasonable prices.
  • Nanya SDRAM - NT5TU128M8HE-AC
    NT5TU128M8HE-AC : Nanya SDRAM
    SDRAM
    1. Commercial, Industrial and Automotive DDR2 1Gb SDRAM
    2. Features:
      • JEDEC DDR2 Compliant
        - Double-data rate on DQs, DQS, DM bus
        - 4n Prefetch Architecture
      • Throughput of valid Commands
        - Posted CAS and Additive Latency (AL)
      • Signal Integrity
        - Configurable DS for system compatibility
        - Configurable On-Die Termination
      • Data Integrity - Auto Refresh and Self Refresh Modes
      • Power Saving Modes
        - Power Down Mode
        - Partial Array Self Refresh (PASR)
      • SSTL_18 compliance and Power Supply
        - VDD/VDDQ = 1.70 to 1.90V
    3. Delivery time: 7-10days from distributor
    4. Payment: T/T in advance
  • DDR3 SDRAM - NT5CB256M16CP-DI
    NT5CB256M16CP-DI : DDR3 SDRAM
    SDRAM
    1. DDR3(L) 4Gb SDRAM
    2. Features:
      • JEDEC DDR3 Compliant
        - 8n Prefetch Architecture
        - Differential Clock(CK/ CK) and Data Strobe(DQS/ DQS)
        - Double-data rate on DQs, DQS and DM
      • Data Integrity
        - Auto Self Refresh (ASR) by DRAM built-in TS
        - Auto Refresh and Self Refresh Modes
      • Power Saving Mode
        - Partial Array Self Refresh (PASR)1
        - Power Down Mode
      • Signal Integrity
        - Configurable DS for system compatibility
        - Configurable On-Die Termination
        - ZQ Calibration for DS/ODT impedance accuracy via external ZQ pad (240 ohm ± 1%)
      • Signal Synchronization
        - Write Leveling via MR settings 7
        - Read Leveling via MPR
    3. Delivery time: 7-10days from distributor
    4. Payment: T/T in advance
  • DDR3L SDRAM - NT5CB512M8CN-DI
    NT5CB512M8CN-DI : DDR3L SDRAM
    SDRAM
    1. DDR3(L) 4Gb SDRAM
    2. Features:
      • CAS Latency (5/6/7/8/9/10/11/12/13/14)
      • CAS Write Latency (5/6/7/8/9/10)
      • Additive Latency (0/CL-1/CL-2)
      • Write Recovery Time (5/6/7/8/10/12/14/16)
      • Burst Type (Sequential/Interleaved)
      • Burst Length (BL8/BC4/BC4 or 8 on the fly)
      • Self RefreshTemperature Range(Normal/Extended)
      • Output Driver Impedance (34/40)
      • On-Die Termination of Rtt_Nom(20/30/40/60/120)
      • On-Die Termination of Rtt_WR(60/120)
      • Precharge Power Down (slow/fast)
    3. Delivery time: 2WEEKS from distributor
    4. Payment: T/T in advance
  • 1Gb DDR2 SDRAM - NT5TU128M8GE-AC
    NT5TU128M8GE-AC : 1Gb DDR2 SDRAM
    SDRAM
    1. 1Gb DDR2 SDRAM
    2. Description: The 1giga bit (1Gb) Double-Data-Rate-2 (DDR2) DRAMs is a high-speed CMOS Double Data Rate 2 SDRAM containing 1,073,741,824 bits. It is internally configured as an octal-bank DRAM.
      The 1Gb chip is organized as 32Mbit x 4 I/O x 8 bank, 16Mbit x 8 I/O x 8 bank or 8Mbit x 16 I/O x 8 bank device. These synchronous devices achieve high speed double-data-rate transfer rates of up to 1066 Mb/sec/pin for general applications.
      The chip is designed to comply with all key DDR2 DRAM key features:
      (1) posted CAS with additive latency
      (2) write latency = read latency -1
      (3) normal and weak strength data-output driver
      (4) variable data-output impedance adjustment and
      (5) an ODT (On-Die Termination) function.
    3. Delivery time: 2WEEKS from distributor
    4. Payment: T/T in advance
We have advanced producing equipments of

Nanya Memory

and good workmanship and gradually explore some new design. All overseas partners are welcome to negotiate and cooperate with us.

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